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| STGW30NC120HD N-channel 1200V - 30A - TO-247 Very fast PowerMESHTM IGBT General features Type VCES VCE(sat) @25C < 2.75V IC @100C 30A STGW30NC120HD 1200V Low on-losses Low on-voltage drop (Vcesat) High current capability High input impedance (voltage driven) Low gate charge Ideal for soft switching application TO-247 Description Using the latest high voltage technology based on its patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency application in order to achieve very high switching performances (reduced tfall) maintaining a low voltage drop. Internal schematic diagram Applications Induction heating Order codes Part number STGW30NC120HD Marking GW30NC120HD Package TO-247 Packaging Tube January 2007 Rev 8 1/13 www.st.com 13 Contents STGW30NC120HD Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 STGW30NC120HD Electrical ratings 1 Electrical ratings Table 1. Symbol VCES IC (1) IC (1) ICL (2) VGE PTOT If Tj Tstg 1. Absolute maximum ratings Parameter Collector-emitter voltage (VGS = 0) Collector current (continuous) at 25C Collector current (continuous) at 100C Collector current (pulsed) Gate-emitter voltage Total dissipation at TC = 25C Diode RMS forward current at TC = 25C Operating junction temperature -55 to 150 Storage temperature C Value 1200 60 30 135 25 220 30 Unit V A A A V W A Calculated according to the iterative formula: T -T JMAX C I ( T ) = ----------------------------------------------------------------------------------------------------CC R xV (T , I ) THJ - C CESAT ( MAX ) C C 2. Vclamp=960V, Tj=125C, RG=10, VGE=15V Table 2. Symbol Rthj-case Rthj-amb Rthj-amb Thermal resistance Parameter Thermal resistance junction-case Thermal resistance junction-ambient (diode) Thermal resistance junction-ambient (IGBT) Value 0.57 1.6 50 Unit C/W C/W C/W 3/13 Electrical characteristics STGW30NC120HD 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 3. Symbol VBR(CES) VCE(SAT) VGE(th) ICES IGES gfs Static Parameter Collector-emitter breakdown voltage Test conditions IC = 1mA, VGE = 0 Min. 1200 2.2 2.0 3.75 2.75 Typ. Max. Unit V V V V A mA nA S Collector-emitter saturation VGE= 15V, IC= 20A, Tj= 25C voltage VGE= 15V, IC= 20A, Tj=125C Gate threshold voltage Collector-emitter leakage current (VCE = 0) Gate-emitter leakage current (VCE = 0) Forward transconductance VCE= VGE, IC= 250A VGE =Max rating,Tc=25C VGE =Max rating, Tc=125C VGE = 20V , VCE = 0 VCE = 25V, IC= 20A 5.75 500 10 100 14 Table 4. Symbol Cies Coes Cres Qg Qge Qgc Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions Min. Typ. 2510 175 30 110 16 49 120 Max. Unit pF pF pF nC nC nC VCE = 25V, f = 1 MHz, VGE=0 VCE = 960V, IC= 20A,VGE=15V 4/13 STGW30NC120HD Electrical characteristics Table 5. Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf Switching on/off (inductive load) Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on delay time Current rise time Turn-on current slope Off voltage rise time Turn-off delay time Current fall time Off voltage rise time Turn-off delay time Current fall time Test conditions VCC = 960V, IC = 20A RG= 10 VGE= 15V, , Tj=25C (see Figure 16) VCC = 960V, IC = 20A , RG= 10 VGE= 15V, Tj= 125C (see Figure 16) VCC = 960V, IC = 20A , RG= 10 VGE= 15V, Tj= 25C (see Figure 16) VCC = 960V, IC = 20A RG= 10 VGE= 15V, , Tj= 125C (see Figure 16) Min. Typ. 29 11 1820 27 14 1580 90 275 312 150 336 592 Max. Unit ns ns A/s ns ns A/s ns ns ns ns ns ns Table 6. Symbol Eon (1) Eoff (2) Switching energy (inductive load) Parameter Turn-on switching losses Turn-off switching losses Total switching losses Turn-on switching losses Turn-off switching losses Total switching losses Test conditions VCC = 960V, IC = 20A , RG= 10 VGE= 15V, Tj= 25C (see Figure 16) VCC = 960V, IC = 20A , RG= 10 VGE= 15V, Tj= 125C (see Figure 16) Min. Typ. 1660 4438 6098 3015 6900 9915 Max. Unit J J J J J J Ets Eon (1) Eoff (2) Ets 1. Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25C and 125C) 2. Turn-off losses include also the tail of the collector current Table 7. Symbol Vf trr Qrr Irrm Collector-emitter diode Parameter Forward on-voltage Reverse recovery time Reverse recovery charge Reverse recovery current Test conditions If = 20A, Tj = 25C If = 20A, Tj = 125C If = 20A, VR = 27V, Tj = 125C, di/dt = 100A/s (see Figure 19) Min. Typ. 1.9 1.7 152 722 9 Max. 2.5 Unit V V ns nC A 5/13 Electrical characteristics STGW30NC120HD 2.1 Electrical characteristics (curves) Figure 1. Output characteristics Figure 2. Transfer characteristics Figure 3. Transconductance Figure 4. Collector-emitter on voltage vs. temperature Figure 5. Gate charge vs. gate-source voltage Figure 6. Capacitance variations 6/13 STGW30NC120HD Figure 7. Normalized gate threshold voltage vs. temperature Figure 8. Electrical characteristics Collector-emitter on voltage vs. collector current Figure 9. Normalized breakdown voltage vs. temperature Figure 10. Switching losses vs. temperature Figure 11. Switching losses vs. gate resistance Figure 12. Switching losses vs. collector current 7/13 Electrical characteristics Figure 13. Thermal Impedance STGW30NC120HD Figure 14. Turn-off SOA Figure 15. Emitter-collector diode characteristics 8/13 STGW30NC120HD Test circuit 3 Test circuit Figure 17. Gate charge test circuit Figure 16. Test circuit for inductive load switching Figure 18. Switching waveform Figure 19. Diode recovery time waveform 9/13 Package mechanical data STGW30NC120HD 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/13 STGW30NC120HD Package mechanical data TO-247 MECHANICAL DATA mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620 DIM. A A1 b b1 b2 c D E e L L1 L2 oP oR S 11/13 Revision history STGW30NC120HD 5 Revision history Table 8. Date 23-Nov-2005 17-Mar-2006 05-May-2006 30-May-2006 23-Jun-2006 07-Sep-2006 14-Nov-2006 26-Jan-2007 Revision history Revision 1 2 3 4 5 6 7 8 First issue. Complete version Modified value on Table 1.: Absolute maximum ratings New values onTable 2: Thermal resistance Modified value on Table 3.: Static Modified TJ temperature range to 150C in Table 1.: Absolute maximum ratings Modified Figure 4. and Figure 8. Typing error on first page. Changes 12/13 STGW30NC120HD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 13/13 |
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